onsemi N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 NTA7002NT1G

RS noliktavas nr.: 780-0501PRažotājs: onsemiRažotāja kods: NTA7002NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Transistor Material

Si

Length

1.65mm

Width

0.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

Produkta apraksts

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 46,00

€ 0,092 Katrs (tiek piegadats Rulli) (bez PVN)

€ 55,66

€ 0,111 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 NTA7002NT1G
Izvēlēties iepakojuma veidu

€ 46,00

€ 0,092 Katrs (tiek piegadats Rulli) (bez PVN)

€ 55,66

€ 0,111 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

onsemi N-Channel MOSFET, 150 mA, 30 V, 3-Pin SC-75 NTA7002NT1G

Noliktavas stāvoklis patreiz nav pieejams

Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

DaudzumsVienības cenaPer Rullis
500 - 1200€ 0,092€ 4,60
1250 - 2450€ 0,088€ 4,40
2500 - 4950€ 0,08€ 4,00
5000+€ 0,074€ 3,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

150 mA

Maximum Drain Source Voltage

30 V

Package Type

SC-75

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Transistor Material

Si

Length

1.65mm

Width

0.9mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.8mm

Produkta apraksts

N-Channel MOSFET with Schottky Diode, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more