Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

RS noliktavas nr.: 166-0610Ražotājs: NexperiaRažotāja kods: BSH203,215
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Noliktavas stāvoklis patreiz nav pieejams

€ 336,00

€ 0,112 Katrs (Rulli ir 3000) (bez PVN)

€ 406,56

€ 0,136 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215

€ 336,00

€ 0,112 Katrs (Rulli ir 3000) (bez PVN)

€ 406,56

€ 0,136 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

470 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

900 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.68V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

2.2 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more