IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

RS noliktavas nr.: 193-543Ražotājs: IXYSRažotāja kods: IXFH69N30P
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Specifikācija

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

156 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Height

21.46mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Noliktavas stāvoklis patreiz nav pieejams

€ 12,00

€ 12,00 Katrs (bez PVN)

€ 14,52

€ 14,52 Katrs (Ieskaitot PVN)

IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
Izvēlēties iepakojuma veidu

€ 12,00

€ 12,00 Katrs (bez PVN)

€ 14,52

€ 14,52 Katrs (Ieskaitot PVN)

IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
Noliktavas stāvoklis patreiz nav pieejams
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti

Specifikācija

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

156 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Height

21.46mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more