Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Izcelsmes valsts
Austria
Noliktavas stāvoklis patreiz nav pieejams
P.O.A.
Infineon FF450R12ME7BPSA1, P-Channel Dual IGBT, 450 A 1200 V AG-ECONOD, Through Hole
1
P.O.A.
Infineon FF450R12ME7BPSA1, P-Channel Dual IGBT, 450 A 1200 V AG-ECONOD, Through Hole
Noliktavas stāvoklis patreiz nav pieejams
1
Noliktavas stāvoklis patreiz nav pieejams
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Tehniskie dokumenti
Specifikācija
Brand
InfineonMaximum Continuous Collector Current
450 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Configuration
Dual
Package Type
AG-ECONOD
Mounting Type
Through Hole
Channel Type
P
Izcelsmes valsts
Austria