Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 65,00
€ 0,65 Katrs (tiek piegadats Rulli) (bez PVN)
€ 78,65
€ 0,786 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 65,00
€ 0,65 Katrs (tiek piegadats Rulli) (bez PVN)
€ 78,65
€ 0,786 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 180 | € 0,65 | € 13,00 |
200 - 480 | € 0,622 | € 12,44 |
500 - 980 | € 0,553 | € 11,06 |
1000+ | € 0,518 | € 10,36 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.15mm
Typical Gate Charge @ Vgs
47.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.07mm
Minimum Operating Temperature
-50 °C
Izcelsmes valsts
China
Produkta apraksts