Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 3,90
€ 3,90 Katrs (bez PVN)
€ 4,72
€ 4,72 Katrs (Ieskaitot PVN)
Standarts
1
€ 3,90
€ 3,90 Katrs (bez PVN)
€ 4,72
€ 4,72 Katrs (Ieskaitot PVN)
Standarts
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
1 - 9 | € 3,90 |
10 - 49 | € 3,30 |
50 - 99 | € 3,10 |
100 - 249 | € 2,85 |
250+ | € 2,45 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts