Vishay P-Channel MOSFET, 6 A, 60 V, 3-Pin TO-220FP IRFI9Z24GPBF
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 11,00
€ 1,10 Katrs (Paka ir 10) (bez PVN)
€ 13,31
€ 1,331 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 11,00
€ 1,10 Katrs (Paka ir 10) (bez PVN)
€ 13,31
€ 1,331 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 40 | € 1,10 | € 11,00 |
| 50 - 90 | € 1,00 | € 10,00 |
| 100 - 240 | € 0,947 | € 9,47 |
| 250 - 490 | € 0,88 | € 8,80 |
| 500+ | € 0,724 | € 7,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.63mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Number of Elements per Chip
1
Transistor Material
Si
Height
16.12mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products