Vishay Siliconix TrenchFET P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Si2319DDS-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Length
3.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.02mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 504,00
€ 0,168 Katrs (Rulli ir 3000) (bez PVN)
€ 609,84
€ 0,203 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 504,00
€ 0,168 Katrs (Rulli ir 3000) (bez PVN)
€ 609,84
€ 0,203 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.4mm
Length
3.04mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.02mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products