Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
7.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1 230,00
€ 0,492 Katrs (Rulli ir 2500) (bez PVN)
€ 1 488,30
€ 0,595 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 1 230,00
€ 0,492 Katrs (Rulli ir 2500) (bez PVN)
€ 1 488,30
€ 0,595 Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
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Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Width
6.2mm
Length
6.6mm
Typical Gate Charge @ Vgs
7.5 nC @ 5 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Produkta apraksts