STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32

RS noliktavas nr.: 486-4577Ražotājs: STMicroelectronicsRažotāja kods: MJE350
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Specifikācija

Transistor Type

PNP

Maximum DC Collector Current

-500 mA

Maximum Collector Emitter Voltage

-300 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

20.8 W

Minimum DC Current Gain

30

Transistor Configuration

Single

Maximum Collector Base Voltage

300 V

Maximum Emitter Base Voltage

3 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.8 x 7.8 x 2.7mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Jūs varētu interesēt
onsemi MJE350G PNP Transistor, -500 mA, -300 V, 3-Pin TO-225
€ 1,042Katrs (Paka ir 20) (bez PVN)
Noliktavas stāvoklis patreiz nav pieejams

€ 3,68

€ 0,736 Katrs (Paka ir 5) (bez PVN)

€ 4,45

€ 0,891 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32

€ 3,68

€ 0,736 Katrs (Paka ir 5) (bez PVN)

€ 4,45

€ 0,891 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MJE350 PNP Transistor, -500 mA, -300 V, 3-Pin SOT-32
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 0,736€ 3,68
10 - 95€ 0,611€ 3,06
100 - 495€ 0,427€ 2,14
500 - 995€ 0,368€ 1,84
1000+€ 0,315€ 1,58

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
onsemi MJE350G PNP Transistor, -500 mA, -300 V, 3-Pin TO-225
€ 1,042Katrs (Paka ir 20) (bez PVN)

Tehniskie dokumenti

Specifikācija

Transistor Type

PNP

Maximum DC Collector Current

-500 mA

Maximum Collector Emitter Voltage

-300 V

Package Type

SOT-32

Mounting Type

Through Hole

Maximum Power Dissipation

20.8 W

Minimum DC Current Gain

30

Transistor Configuration

Single

Maximum Collector Base Voltage

300 V

Maximum Emitter Base Voltage

3 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

10.8 x 7.8 x 2.7mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
onsemi MJE350G PNP Transistor, -500 mA, -300 V, 3-Pin TO-225
€ 1,042Katrs (Paka ir 20) (bez PVN)