Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
60 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 92,50
€ 1,85 Katrs (tiek piegadats Rulli) (bez PVN)
€ 111,92
€ 2,238 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 92,50
€ 1,85 Katrs (tiek piegadats Rulli) (bez PVN)
€ 111,92
€ 2,238 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 95 | € 1,85 | € 9,25 |
100 - 495 | € 1,60 | € 8,00 |
500 - 995 | € 1,40 | € 7,00 |
1000+ | € 1,30 | € 6,50 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
60 V
Package Type
SO-8FL
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
66 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.05mm
Minimum Operating Temperature
-55 °C
Produkta apraksts