Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.8 x 5 x 20.1mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
€ 90,00
€ 3,00 Katrs (Tubina ir 30) (bez PVN)
€ 108,90
€ 3,63 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 90,00
€ 3,00 Katrs (Tubina ir 30) (bez PVN)
€ 108,90
€ 3,63 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
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Tehniskie dokumenti
Specifikācija
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
16 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-3P
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Minimum DC Current Gain
20
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
15.8 x 5 x 20.1mm
Izcelsmes valsts
Korea, Republic Of
Produkta apraksts
NPN Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.