onsemi NDS352AP P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

RS noliktavas nr.: 178-7591Ražotājs: onsemiRažotāja kods: NDS352AP
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

NDS352AP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 486,00

€ 0,162 Katrs (Rulli ir 3000) (bez PVN)

€ 588,06

€ 0,196 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi NDS352AP P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP

€ 486,00

€ 0,162 Katrs (Rulli ir 3000) (bez PVN)

€ 588,06

€ 0,196 Katrs (Rulli ir 3000) (Ieskaitot PVN)

onsemi NDS352AP P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 NDS352AP
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

NDS352AP

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Number of Elements per Chip

1

Width

1.4mm

Length

2.92mm

Minimum Operating Temperature

-55 °C

Height

0.94mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more