Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR

RS noliktavas nr.: 170-5355Ražotājs: NexperiaRažotāja kods: PMV16XNR
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

20 V

Series

PMV16XN

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

13.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 14,30

€ 0,286 Katrs (Paka ir 50) (bez PVN)

€ 17,30

€ 0,346 Katrs (Paka ir 50) (Ieskaitot PVN)

Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR
Izvēlēties iepakojuma veidu

€ 14,30

€ 0,286 Katrs (Paka ir 50) (bez PVN)

€ 17,30

€ 0,346 Katrs (Paka ir 50) (Ieskaitot PVN)

Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
50 - 200€ 0,286€ 14,30
250 - 450€ 0,132€ 6,60
500 - 1200€ 0,125€ 6,25
1250 - 2450€ 0,111€ 5,55
2500+€ 0,108€ 5,40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

20 V

Series

PMV16XN

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

13.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more