IXYS Linear N-Channel MOSFET, 12 A, 1000 V, 3-Pin TO-247 IXTH12N100L
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1000 V
Series
Linear
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
155 nC @ 20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21.46mm
Izcelsmes valsts
Germany
Produkta apraksts
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 660,00
€ 22,00 Katrs (Tubina ir 30) (bez PVN)
€ 798,60
€ 26,62 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 660,00
€ 22,00 Katrs (Tubina ir 30) (bez PVN)
€ 798,60
€ 26,62 Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
1000 V
Series
Linear
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
400 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
5.3mm
Length
16.26mm
Typical Gate Charge @ Vgs
155 nC @ 20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
21.46mm
Izcelsmes valsts
Germany
Produkta apraksts
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products