Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1

RS noliktavas nr.: 215-2539Ražotājs: InfineonRažotāja kods: IPP60R099P7XKSA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

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Noliktavas stāvoklis patreiz nav pieejams

€ 19,50

€ 3,90 Katrs (Paka ir 5) (bez PVN)

€ 23,60

€ 4,719 Katrs (Paka ir 5) (Ieskaitot PVN)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Izvēlēties iepakojuma veidu

€ 19,50

€ 3,90 Katrs (Paka ir 5) (bez PVN)

€ 23,60

€ 4,719 Katrs (Paka ir 5) (Ieskaitot PVN)

Infineon CoolMOS™ P7 N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 IPP60R099P7XKSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 3,90€ 19,50
25 - 45€ 3,30€ 16,50
50 - 120€ 3,10€ 15,50
125 - 245€ 2,85€ 14,25
250+€ 2,65€ 13,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.099 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

± 20 V

Width

15.95mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+150 °C

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more