Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1

RS noliktavas nr.: 222-4669PRažotājs: InfineonRažotāja kods: IPD60N10S4L12ATMA1
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Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 5,15

€ 0,515 Katrs (tiek piegadats Rulli) (bez PVN)

€ 6,23

€ 0,623 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 10.

Ražošana -

Pieejams komplektos pa 10.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

10

Pieejams komplektos pa 10
10€ 5,15
20€ 10,30
30€ 15,45
40€ 20,60
50€ 25,75
60€ 30,90
70€ 36,05
80€ 41,20
90€ 46,35
100€ 51,50
110€ 56,65
120€ 61,80
130€ 66,95
140€ 72,10
150€ 77,25

€ 5,15

€ 0,515 Katrs (tiek piegadats Rulli) (bez PVN)

€ 6,23

€ 0,623 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Industriālais iepakojums (Rullis)

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 10.

Ražošana -

Pieejams komplektos pa 10.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

10

Pieejams komplektos pa 10
10€ 5,15
20€ 10,30
30€ 15,45
40€ 20,60
50€ 25,75
60€ 30,90
70€ 36,05
80€ 41,20
90€ 46,35
100€ 51,50
110€ 56,65
120€ 61,80
130€ 66,95
140€ 72,10
150€ 77,25

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.012 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more