Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
€ 3 650,00
€ 3,65 Katrs (Rulli ir 1000) (bez PVN)
€ 4 416,50
€ 4,416 Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 3 650,00
€ 3,65 Katrs (Rulli ir 1000) (bez PVN)
€ 4 416,50
€ 4,416 Katrs (Rulli ir 1000) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
1000
Noliktavas stāvoklis patreiz nav pieejams
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
10.25mm
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm