Infineon 1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP MOSFET Gate Driver for

RS noliktavas nr.: 179-969Ražotājs: InfineonRažotāja kods: EVAL6ED2231S12TM1TOBO1
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Tehniskie dokumenti

Specifikācija

Power Management Function

MOSFET Gate Driver

For Use With

IGBT/SiC with Integrated Bootstrap Diode and OCP

Kit Classification

Motor Driver Board

Featured Device

6ED2231S12T

Kit Name

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP

€ 900,00

€ 900,00 Katrs (bez PVN)

€ 1 089,00

€ 1 089,00 Katrs (Ieskaitot PVN)

Infineon 1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP MOSFET Gate Driver for

€ 900,00

€ 900,00 Katrs (bez PVN)

€ 1 089,00

€ 1 089,00 Katrs (Ieskaitot PVN)

Infineon 1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP MOSFET Gate Driver for

Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Tehniskie dokumenti

Specifikācija

Power Management Function

MOSFET Gate Driver

For Use With

IGBT/SiC with Integrated Bootstrap Diode and OCP

Kit Classification

Motor Driver Board

Featured Device

6ED2231S12T

Kit Name

1200 V Three Phase Gate Driver for IGBT/SiC with Integrated Bootstrap Diode and OCP