Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China
€ 12,60
€ 0,063 Katrs (tiek piegadats Rulli) (bez PVN)
€ 15,25
€ 0,076 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
200
€ 12,60
€ 0,063 Katrs (tiek piegadats Rulli) (bez PVN)
€ 15,25
€ 0,076 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
200
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
200 - 400 | € 0,063 | € 6,30 |
500 - 900 | € 0,051 | € 5,10 |
1000 - 1900 | € 0,046 | € 4,60 |
2000+ | € 0,043 | € 4,30 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Izcelsmes valsts
China