Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3

RS noliktavas nr.: 819-3917Ražotājs: VishayRažotāja kods: SQ4401EY-T1_GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

7.14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 25,50

€ 2,55 Katrs (Paka ir 10) (bez PVN)

€ 30,86

€ 3,086 Katrs (Paka ir 10) (Ieskaitot PVN)

Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Izvēlēties iepakojuma veidu

€ 25,50

€ 2,55 Katrs (Paka ir 10) (bez PVN)

€ 30,86

€ 3,086 Katrs (Paka ir 10) (Ieskaitot PVN)

Vishay SQ Rugged P-Channel MOSFET, 17 A, 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 2,55€ 25,50
50 - 90€ 2,05€ 20,50
100 - 240€ 1,80€ 18,00
250 - 490€ 1,65€ 16,50
500+€ 1,40€ 14,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

7.14 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

74 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.55mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more