Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3

RS noliktavas nr.: 180-7399Ražotājs: VishayRažotāja kods: SQ2337ES-T1_GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.314 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 870,00

€ 0,29 Katrs (Rulli ir 3000) (bez PVN)

€ 1 052,70

€ 0,351 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3

€ 870,00

€ 0,29 Katrs (Rulli ir 3000) (bez PVN)

€ 1 052,70

€ 0,351 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay TrenchFET P-Channel MOSFET, 2.2 A, 80 V, 3-Pin SOT-23 SQ2337ES-T1_GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

80 V

Series

TrenchFET

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.314 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more