Vishay SiZ998BDT Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 SIZ998BDT-T1-GE3

RS noliktavas nr.: 204-7265Ražotājs: VishayRažotāja kods: SIZ998BDT-T1-GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

94.6 A

Maximum Drain Source Voltage

30 V

Series

SiZ998BDT

Package Type

PowerPAIR 6 x 5

Pin Count

8

Maximum Drain Source Resistance

0.00439 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 278,00

€ 0,426 Katrs (Rulli ir 3000) (bez PVN)

€ 1 546,38

€ 0,515 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay SiZ998BDT Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 SIZ998BDT-T1-GE3

€ 1 278,00

€ 0,426 Katrs (Rulli ir 3000) (bez PVN)

€ 1 546,38

€ 0,515 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay SiZ998BDT Dual N-Channel MOSFET, 94.6 A, 30 V, 8-Pin PowerPAIR 6 x 5 SIZ998BDT-T1-GE3
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Ideate. Create. Collaborate

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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

94.6 A

Maximum Drain Source Voltage

30 V

Series

SiZ998BDT

Package Type

PowerPAIR 6 x 5

Pin Count

8

Maximum Drain Source Resistance

0.00439 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more