Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +16 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
172.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
€ 12,75
€ 2,55 Katrs (tiek piegadats Rulli) (bez PVN)
€ 15,43
€ 3,086 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
€ 12,75
€ 2,55 Katrs (tiek piegadats Rulli) (bez PVN)
€ 15,43
€ 3,086 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
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Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +16 V
Number of Elements per Chip
1
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
172.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China