Vishay N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 SIR462DP-T1-GE3

RS noliktavas nr.: 165-2723Ražotājs: VishayRažotāja kods: SIR462DP-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.89mm

Length

4.9mm

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.04mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1 290,00

€ 0,43 Katrs (Rulli ir 3000) (bez PVN)

€ 1 560,90

€ 0,52 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 SIR462DP-T1-GE3

€ 1 290,00

€ 0,43 Katrs (Rulli ir 3000) (bez PVN)

€ 1 560,90

€ 0,52 Katrs (Rulli ir 3000) (Ieskaitot PVN)

Vishay N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 SIR462DP-T1-GE3

Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5.89mm

Length

4.9mm

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.04mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more