Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3

RS noliktavas nr.: 814-1225Ražotājs: VishayRažotāja kods: SIA517DJ-T1-GE3
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

2.15mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,32

€ 0,566 Katrs (Paka ir 20) (bez PVN)

€ 13,70

€ 0,685 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Izvēlēties iepakojuma veidu

€ 11,32

€ 0,566 Katrs (Paka ir 20) (bez PVN)

€ 13,70

€ 0,685 Katrs (Paka ir 20) (Ieskaitot PVN)

Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
20 - 180€ 0,566€ 11,32
200 - 480€ 0,499€ 9,98
500 - 980€ 0,419€ 8,38
1000 - 1980€ 0,396€ 7,92
2000+€ 0,339€ 6,78

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.3 A, 4.5 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

65 mΩ, 170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.5 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

2.15mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.15mm

Typical Gate Charge @ Vgs

13.1 nC @ 8 V, 9.7 nC @ 8 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more