Vishay Dual N/P-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 SI1029X-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
1.7mm
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 9,64
€ 0,482 Katrs (Paka ir 20) (bez PVN)
€ 11,66
€ 0,583 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 9,64
€ 0,482 Katrs (Paka ir 20) (bez PVN)
€ 11,66
€ 0,583 Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 20 - 180 | € 0,482 | € 9,64 |
| 200 - 480 | € 0,454 | € 9,08 |
| 500 - 980 | € 0,41 | € 8,20 |
| 1000 - 1980 | € 0,386 | € 7,72 |
| 2000+ | € 0,362 | € 7,24 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Length
1.7mm
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.6mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products