Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF

RS noliktavas nr.: 541-1124Ražotājs: VishayRažotāja kods: IRFBE30PBFDistrelec Article No.: 17115208
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Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

78 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFBE30 4.1A 800V
P.O.A.Katrs (bez PVN)
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€ 2,15

€ 2,15 Katrs (bez PVN)

€ 2,60

€ 2,60 Katrs (Ieskaitot PVN)

Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
Izvēlēties iepakojuma veidu

€ 2,15

€ 2,15 Katrs (bez PVN)

€ 2,60

€ 2,60 Katrs (Ieskaitot PVN)

Vishay N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB IRFBE30PBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

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10 - 49€ 2,10
50 - 99€ 2,00
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRFBE30 4.1A 800V
P.O.A.Katrs (bez PVN)

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

78 nC @ 10 V

Width

4.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
N-channel MOSFET,IRFBE30 4.1A 800V
P.O.A.Katrs (bez PVN)