Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Izcelsmes valsts
China
Produkta apraksts
MOSFET Transistors, Toshiba
€ 5,75
€ 1,15 Katrs (Paka ir 5) (bez PVN)
€ 6,96
€ 1,392 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 5,75
€ 1,15 Katrs (Paka ir 5) (bez PVN)
€ 6,96
€ 1,392 Katrs (Paka ir 5) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
5
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,15 | € 5,75 |
25 - 95 | € 1,00 | € 5,00 |
100 - 245 | € 0,877 | € 4,38 |
250 - 495 | € 0,821 | € 4,10 |
500+ | € 0,773 | € 3,86 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
800 V
Series
TK
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.5mm
Height
15mm
Izcelsmes valsts
China
Produkta apraksts