Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
Japan
€ 10,50
€ 1,05 Katrs (Paka ir 10) (bez PVN)
€ 12,70
€ 1,27 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 10,50
€ 1,05 Katrs (Paka ir 10) (bez PVN)
€ 12,70
€ 1,27 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 40 | € 1,05 | € 10,50 |
50 - 90 | € 0,949 | € 9,49 |
100 - 990 | € 0,731 | € 7,31 |
1000+ | € 0,451 | € 4,51 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Automotive Standard
AEC-Q101
Izcelsmes valsts
Japan