Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

RS noliktavas nr.: 171-2492Ražotājs: ToshibaRažotāja kods: TJ8S06M3L
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

Japan

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Noliktavas stāvoklis patreiz nav pieejams

€ 10,50

€ 1,05 Katrs (Paka ir 10) (bez PVN)

€ 12,70

€ 1,27 Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L
Izvēlēties iepakojuma veidu

€ 10,50

€ 1,05 Katrs (Paka ir 10) (bez PVN)

€ 12,70

€ 1,27 Katrs (Paka ir 10) (Ieskaitot PVN)

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 1,05€ 10,50
50 - 90€ 0,949€ 9,49
100 - 990€ 0,731€ 7,31
1000+€ 0,451€ 4,51

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Izcelsmes valsts

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more