Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
€ 6,38
€ 0,319 Katrs (Paka ir 20) (bez PVN)
€ 7,72
€ 0,386 Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 6,38
€ 0,319 Katrs (Paka ir 20) (bez PVN)
€ 7,72
€ 0,386 Katrs (Paka ir 20) (Ieskaitot PVN)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 40 | € 0,319 | € 6,38 |
60 - 100 | € 0,279 | € 5,58 |
120 - 220 | € 0,239 | € 4,78 |
240 - 460 | € 0,234 | € 4,68 |
480+ | € 0,227 | € 4,54 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Japan
Produkta apraksts