Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
€ 6,58
€ 0,263 Katrs (Paka ir 25) (bez PVN)
€ 7,96
€ 0,318 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 6,58
€ 0,263 Katrs (Paka ir 25) (bez PVN)
€ 7,96
€ 0,318 Katrs (Paka ir 25) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Standarts
25
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 225 | € 0,263 | € 6,58 |
250 - 475 | € 0,221 | € 5,52 |
500+ | € 0,214 | € 5,35 |
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Produkta apraksts