STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-220 STP30NF10

RS noliktavas nr.: 485-7585Ražotājs: STMicroelectronicsRažotāja kods: STP30NF10
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4.6mm

Height

9.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,75

€ 1,75 Katrs (Paka ir 5) (bez PVN)

€ 10,59

€ 2,118 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-220 STP30NF10
Izvēlēties iepakojuma veidu

€ 8,75

€ 1,75 Katrs (Paka ir 5) (bez PVN)

€ 10,59

€ 2,118 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics STripFET N-Channel MOSFET, 35 A, 100 V, 3-Pin TO-220 STP30NF10
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 5€ 1,75€ 8,75
10 - 20€ 1,60€ 8,00
25 - 95€ 1,50€ 7,50
100 - 495€ 1,15€ 5,75
500+€ 0,957€ 4,78

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

STripFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

115 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4.6mm

Height

9.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more