Transistor,MOSFET,STP22NE10L

RS noliktavas nr.: 485-7579Ražotājs: STMicroelectronicsRažotāja kods: STP22NE10L
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

90 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Height

15.75mm

Width

4.6mm

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P.O.A.

Katrs (Paka ir 5) (bez PVN)

Transistor,MOSFET,STP22NE10L

P.O.A.

Katrs (Paka ir 5) (bez PVN)

Transistor,MOSFET,STP22NE10L

Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

90 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Height

15.75mm

Width

4.6mm

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