Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
15.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.8mm
Produkta apraksts
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 9,50
€ 4,75 Katrs (Paka ir 2) (bez PVN)
€ 11,50
€ 5,748 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 9,50
€ 4,75 Katrs (Paka ir 2) (bez PVN)
€ 11,50
€ 5,748 Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
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Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Series
MDmesh
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
15.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
4.8mm
Produkta apraksts