STMicroelectronics SCTW70N SiC N-Channel MOSFET, 91 A, 1200 V, 3-Pin HiP247 SCTW70N120G2V

RS noliktavas nr.: 233-3023Ražotājs: STMicroelectronicsRažotāja kods: SCTW70N120G2V
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Package Type

Hip247

Series

SCTW70N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.021 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

SiC

Number of Elements per Chip

1

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Noliktavas stāvoklis patreiz nav pieejams

€ 981,00

€ 32,70 Katrs (Tubina ir 30) (bez PVN)

€ 1 187,01

€ 39,567 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics SCTW70N SiC N-Channel MOSFET, 91 A, 1200 V, 3-Pin HiP247 SCTW70N120G2V

€ 981,00

€ 32,70 Katrs (Tubina ir 30) (bez PVN)

€ 1 187,01

€ 39,567 Katrs (Tubina ir 30) (Ieskaitot PVN)

STMicroelectronics SCTW70N SiC N-Channel MOSFET, 91 A, 1200 V, 3-Pin HiP247 SCTW70N120G2V
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Noliktavas stāvoklis patreiz nav pieejams

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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Package Type

Hip247

Series

SCTW70N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.021 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more