STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4

RS noliktavas nr.: 366-221Ražotājs: STMicroelectronicsRažotāja kods: SCT040W65G3-4
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 13,70

€ 13,70 Katrs (bez PVN)

€ 16,58

€ 16,58 Katrs (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4

€ 13,70

€ 13,70 Katrs (bez PVN)

€ 16,58

€ 16,58 Katrs (Ieskaitot PVN)

STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4
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Noliktavas stāvoklis patreiz nav pieejams

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1 - 9€ 13,70
10 - 99€ 12,40
100+€ 11,40

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Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more