STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Package Type
HiP247-4
Series
SCT
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
€ 31,00
€ 31,00 Katrs (bez PVN)
€ 37,51
€ 37,51 Katrs (Ieskaitot PVN)
STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
1
€ 31,00
€ 31,00 Katrs (bez PVN)
€ 37,51
€ 37,51 Katrs (Ieskaitot PVN)
STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
Noliktavas stāvoklis patreiz nav pieejams
1
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena |
---|---|
1 - 4 | € 31,00 |
5+ | € 30,10 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
650 V
Package Type
HiP247-4
Series
SCT
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Izcelsmes valsts
China