STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220

RS noliktavas nr.: 168-5846Ražotājs: STMicroelectronicsRažotāja kods: BUL216
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Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

9 W

Minimum DC Current Gain

12

Transistor Configuration

Single

Maximum Collector Base Voltage

1600 V

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

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Noliktavas stāvoklis patreiz nav pieejams

€ 85,00

€ 1,70 Katrs (Tubina ir 50) (bez PVN)

€ 102,85

€ 2,057 Katrs (Tubina ir 50) (Ieskaitot PVN)

STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220

€ 85,00

€ 1,70 Katrs (Tubina ir 50) (bez PVN)

€ 102,85

€ 2,057 Katrs (Tubina ir 50) (Ieskaitot PVN)

STMicroelectronics BUL216 NPN Transistor, 4 A, 800 V, 3-Pin TO-220
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Penālis
50 - 50€ 1,70€ 85,00
100 - 200€ 1,30€ 65,00
250 - 450€ 1,30€ 65,00
500 - 950€ 1,10€ 55,00
1000+€ 0,949€ 47,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

800 V

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

9 W

Minimum DC Current Gain

12

Transistor Configuration

Single

Maximum Collector Base Voltage

1600 V

Maximum Emitter Base Voltage

9 V

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.15 x 10.4 x 4.6mm

Maximum Operating Temperature

+150 °C

Produkta apraksts

High Voltage Transistors, STMicroelectronics

Bipolar Transistors, STMicroelectronics

A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more