Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Series
RU1C001UN
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.35mm
Length
2.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Izcelsmes valsts
Thailand
Produkta apraksts
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 9,45
€ 0,063 Katrs (Paka ir 150) (bez PVN)
€ 11,43
€ 0,076 Katrs (Paka ir 150) (Ieskaitot PVN)
150
€ 9,45
€ 0,063 Katrs (Paka ir 150) (bez PVN)
€ 11,43
€ 0,076 Katrs (Paka ir 150) (Ieskaitot PVN)
150
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Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Series
RU1C001UN
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.35mm
Length
2.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Izcelsmes valsts
Thailand
Produkta apraksts