ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL

RS noliktavas nr.: 124-6834Ražotājs: ROHMRažotāja kods: RU1C001UNTCL
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Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Series

RU1C001UN

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

18 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.35mm

Length

2.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Izcelsmes valsts

Thailand

Produkta apraksts

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 9,45

€ 0,063 Katrs (Paka ir 150) (bez PVN)

€ 11,43

€ 0,076 Katrs (Paka ir 150) (Ieskaitot PVN)

ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL

€ 9,45

€ 0,063 Katrs (Paka ir 150) (bez PVN)

€ 11,43

€ 0,076 Katrs (Paka ir 150) (Ieskaitot PVN)

ROHM RU1C001UN N-Channel MOSFET, 100 mA, 20 V, 3-Pin SOT-323 RU1C001UNTCL
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Series

RU1C001UN

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

18 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.35mm

Length

2.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1mm

Izcelsmes valsts

Thailand

Produkta apraksts

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more