Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
935 W
Number of Elements per Chip
2
Width
45.6mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Length
122mm
Minimum Operating Temperature
-40 °C
Height
17mm
Izcelsmes valsts
Japan
Produkta apraksts
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
MOSFET Transistors, ROHM Semiconductor
€ 505,00
€ 505,00 Katrs (bez PVN)
€ 611,05
€ 611,05 Katrs (Ieskaitot PVN)
1
€ 505,00
€ 505,00 Katrs (bez PVN)
€ 611,05
€ 611,05 Katrs (Ieskaitot PVN)
1
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Tehniskie dokumenti
Specifikācija
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
1200 V
Series
BSM
Package Type
c
Mounting Type
Surface Mount
Pin Count
4
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
935 W
Number of Elements per Chip
2
Width
45.6mm
Transistor Material
SiC
Maximum Operating Temperature
+150 °C
Length
122mm
Minimum Operating Temperature
-40 °C
Height
17mm
Izcelsmes valsts
Japan
Produkta apraksts
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.