onsemi NTMFS5C430N N-Channel MOSFET, 185 A, 40 V, 4 + Tab-Pin DFN NTMFS5C430NT1G

RS noliktavas nr.: 170-3399Ražotājs: onsemiRažotāja kods: NTMFS5C430NT1G
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

185 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Series

NTMFS5C430N

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

106 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

€ 942,00

€ 0,628 Katrs (Rulli ir 1500) (bez PVN)

€ 1 139,82

€ 0,76 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi NTMFS5C430N N-Channel MOSFET, 185 A, 40 V, 4 + Tab-Pin DFN NTMFS5C430NT1G

€ 942,00

€ 0,628 Katrs (Rulli ir 1500) (bez PVN)

€ 1 139,82

€ 0,76 Katrs (Rulli ir 1500) (Ieskaitot PVN)

onsemi NTMFS5C430N N-Channel MOSFET, 185 A, 40 V, 4 + Tab-Pin DFN NTMFS5C430NT1G
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

185 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Series

NTMFS5C430N

Mounting Type

Surface Mount

Pin Count

4 + Tab

Maximum Drain Source Resistance

1.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

106 W

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.05mm

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel Power MOSFET, 40V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more