Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
185 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Series
NTMFS5C430N
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
106 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5.1mm
Length
6.1mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 942,00
€ 0,628 Katrs (Rulli ir 1500) (bez PVN)
€ 1 139,82
€ 0,76 Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
€ 942,00
€ 0,628 Katrs (Rulli ir 1500) (bez PVN)
€ 1 139,82
€ 0,76 Katrs (Rulli ir 1500) (Ieskaitot PVN)
1500
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Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
185 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Series
NTMFS5C430N
Mounting Type
Surface Mount
Pin Count
4 + Tab
Maximum Drain Source Resistance
1.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
106 W
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
5.1mm
Length
6.1mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.05mm
Izcelsmes valsts
Malaysia
Produkta apraksts