onsemi PowerTrench Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
830 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-89-6
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
625 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
1.2mm
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Produkta apraksts
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 609,00
€ 0,203 Katrs (Rulli ir 3000) (bez PVN)
€ 736,89
€ 0,246 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 609,00
€ 0,203 Katrs (Rulli ir 3000) (bez PVN)
€ 736,89
€ 0,246 Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
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Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
830 mA
Maximum Drain Source Voltage
20 V
Package Type
SC-89-6
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
625 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
2
Width
1.2mm
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Produkta apraksts
PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products