Tehniskie dokumenti
Specifikācija
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
125 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.6 x 4.6 x 2.6mm
Izcelsmes valsts
Hong Kong
Produkta apraksts
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 600,00
€ 0,15 Katrs (Rulli ir 4000) (bez PVN)
€ 726,00
€ 0,182 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
€ 600,00
€ 0,15 Katrs (Rulli ir 4000) (bez PVN)
€ 726,00
€ 0,182 Katrs (Rulli ir 4000) (Ieskaitot PVN)
4000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Rullis |
---|---|---|
4000 - 8000 | € 0,15 | € 600,00 |
12000+ | € 0,143 | € 572,00 |
Tehniskie dokumenti
Specifikācija
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
125 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1.6 x 4.6 x 2.6mm
Izcelsmes valsts
Hong Kong
Produkta apraksts
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.