IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
132 A
Maximum Drain Source Voltage
250 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Typical Gate Charge @ Vgs
364 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
5.7mm
Izcelsmes valsts
Germany
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 850,00
€ 42,50 Katrs (Tubina ir 20) (bez PVN)
€ 1 028,50
€ 51,425 Katrs (Tubina ir 20) (Ieskaitot PVN)
20
€ 850,00
€ 42,50 Katrs (Tubina ir 20) (bez PVN)
€ 1 028,50
€ 51,425 Katrs (Tubina ir 20) (Ieskaitot PVN)
20
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
132 A
Maximum Drain Source Voltage
250 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
570 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Typical Gate Charge @ Vgs
364 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
5.7mm
Izcelsmes valsts
Germany
Produkta apraksts
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products