Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK IRFR24N15DTRPBF

RS noliktavas nr.: 220-7491Ražotājs: InfineonRažotāja kods: IRFR24N15DTRPBF
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.095 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

30V

Number of Elements per Chip

2

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 072,00

€ 0,536 Katrs (Rulli ir 2000) (bez PVN)

€ 1 297,12

€ 0,649 Katrs (Rulli ir 2000) (Ieskaitot PVN)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK IRFR24N15DTRPBF

€ 1 072,00

€ 0,536 Katrs (Rulli ir 2000) (bez PVN)

€ 1 297,12

€ 0,649 Katrs (Rulli ir 2000) (Ieskaitot PVN)

Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK IRFR24N15DTRPBF
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

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No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

150 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.095 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

30V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more