Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1

RS noliktavas nr.: 284-900PRažotājs: InfineonRažotāja kods: IPT65R040CFD7XTMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Noliktavas stāvoklis patreiz nav pieejams

€ 88,00

€ 8,80 Katrs (tiek piegadats Rulli) (bez PVN)

€ 106,48

€ 10,65 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
Izvēlēties iepakojuma veidu

€ 88,00

€ 8,80 Katrs (tiek piegadats Rulli) (bez PVN)

€ 106,48

€ 10,65 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
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100 - 499€ 8,10
500 - 999€ 7,50
1000+€ 6,70

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more