Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S4L08AATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0082 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
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€ 2 430,00
€ 0,486 Katrs (Rulli ir 5000) (bez PVN)
€ 2 940,30
€ 0,588 Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 2 430,00
€ 0,486 Katrs (Rulli ir 5000) (bez PVN)
€ 2 940,30
€ 0,588 Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0082 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products