Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ 3
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.36mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
€ 13,00
€ 1,30 Katrs (tiek piegadats Rulli) (bez PVN)
€ 15,73
€ 1,573 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 13,00
€ 1,30 Katrs (tiek piegadats Rulli) (bez PVN)
€ 15,73
€ 1,573 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
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Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
80 V
Series
OptiMOS™ 3
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
7.36mm
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
52 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
2.41mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V