Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 4,95
€ 0,99 Katrs (Paka ir 5) (bez PVN)
€ 5,99
€ 1,198 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
€ 4,95
€ 0,99 Katrs (Paka ir 5) (bez PVN)
€ 5,99
€ 1,198 Katrs (Paka ir 5) (Ieskaitot PVN)
Standarts
5
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 45 | € 0,99 | € 4,95 |
| 50 - 120 | € 0,881 | € 4,40 |
| 125 - 245 | € 0,831 | € 4,16 |
| 250 - 495 | € 0,773 | € 3,86 |
| 500+ | € 0,396 | € 1,98 |
Ideate. Create. Collaborate
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No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products